InterFET Corporation JFET J271

Description
JFET JFET P-Channel -30V 50mA 360mW 2.8mW
Description
JFET JFET P-Channel -30V 50mA 360mW 2.8mW
Datasheet
Datasheet Summary
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The J271 is a P-channel silicon junction field-effect transistor for analog switching, sample and hold, and low-noise amplification. It has a maximum gate-source and gate-drain reverse voltage of -30 V, a continuous forward gate current of 50 mA, and a power dissipation of 360 mW at 25°C, derating at 2.8 mW/°C. The gate-source cutoff voltage ranges from 1.5 V to 4.5 V, and the drain saturation current ranges from -6 mA to -50 mA. Common-source transconductance is between 8 mS and 18 mS, input capacitance is 32 pF, and reverse transfer capacitance is 4 pF, all measured at 1 MHz and V_DS = -10 V. Equivalent input noise voltage is 6 nV/√Hz at 1 kHz and I_D = 5 mA.

Datasheet Summary
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The J271 is a P-channel silicon junction field-effect transistor for analog switching, sample and hold, and low-noise amplification. It has a maximum gate-source and gate-drain reverse voltage of -30 V, a continuous forward gate current of 50 mA, and a power dissipation of 360 mW at 25°C, derating at 2.8 mW/°C. The gate-source cutoff voltage ranges from 1.5 V to 4.5 V, and the drain saturation current ranges from -6 mA to -50 mA. Common-source transconductance is between 8 mS and 18 mS, input capacitance is 32 pF, and reverse transfer capacitance is 4 pF, all measured at 1 MHz and V_DS = -10 V. Equivalent input noise voltage is 6 nV/√Hz at 1 kHz and I_D = 5 mA.

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Sheung Wan, Hong Kong
JFET
J271
JFET J271
JFET JFET P-Channel -30V 50mA 360mW 2.8mW

JFET JFET P-Channel -30V 50mA 360mW 2.8mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number J271
Product Name JFET
Transistor Type JFET
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