IFN5565 is a dual N-channel silicon junction field-effect transistor for differential amplifier applications, housed in an SOIC-8 package. It has a maximum reverse gate-source and gate-drain voltage of -40 V, a continuous forward gate current of 50 mA, and a continuous power dissipation of 400 mW. The operating temperature range is -55°C to +125°C, and the storage temperature range is -65°C to +150°C. The device exhibits a typical transconductance of 12.5 mS at 15 V drain-source voltage and 2 mA drain current, with input capacitance of 12 pF and reverse transfer capacitance of 3 pF at 1 MHz. Matching characteristics include a differential gate-source voltage mismatch of 10 mV and a drift of 25 μV/°C over temperature. The drain saturation current ratio and transconductance ratio range from 0.90 to 1.0 under specified test conditions.
JFET N-Ch Dual JFET -40V 50mA 250mW 2.6mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | IFN5565 |
| Product Name | JFET |
| Transistor Type | JFET |
