InterFET Corporation JFET IFN406

Description
JFET JFET N-Channel Dual
Description
JFET JFET N-Channel Dual
Datasheet
Datasheet Summary
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The IFN406 is an N-channel matched dual silicon junction field-effect transistor in an SOIC-8 package, designed for low-noise differential and precision instrumentation amplifier applications. It operates over a temperature range of -55°C to +125°C with a maximum power dissipation of 300 mW and a gate-source breakdown voltage of -50 V. Its differential gate-source voltage match is specified at 40 mV maximum at VDS = 10 V and ID = 200 µA, with a temperature drift of 80 µV/°C across -55°C to +125°C. The device meets automotive and industrial reliability standards as implied by its operating range and static characteristics. The SOIC-8 pinout is defined for the series, with pins configured as S1, D1, G1, S2, D2, G2.

Datasheet Summary
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The IFN406 is an N-channel matched dual silicon junction field-effect transistor in an SOIC-8 package, designed for low-noise differential and precision instrumentation amplifier applications. It operates over a temperature range of -55°C to +125°C with a maximum power dissipation of 300 mW and a gate-source breakdown voltage of -50 V. Its differential gate-source voltage match is specified at 40 mV maximum at VDS = 10 V and ID = 200 µA, with a temperature drift of 80 µV/°C across -55°C to +125°C. The device meets automotive and industrial reliability standards as implied by its operating range and static characteristics. The SOIC-8 pinout is defined for the series, with pins configured as S1, D1, G1, S2, D2, G2.

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Sheung Wan, Hong Kong
JFET JFET N-Channel Dual

JFET JFET N-Channel Dual

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number IFN406
Product Name JFET
Transistor Type JFET
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