InterFET Corporation JFET IFN405

Description
JFET JFET N-Channel Dual
Description
JFET JFET N-Channel Dual
Datasheet
Datasheet Summary
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The IFN405 is an N-channel matched dual silicon junction field-effect transistor designed for low-noise differential and precision instrumentation amplifier applications. It is packaged in an SOIC-8 configuration with a continuous device power dissipation of 300 mW and a power derating of 4.3 mW/°C. The device operates over a temperature range of -55°C to +125°C and has a gate-source breakdown voltage of -50 V. Matching characteristics include a maximum differential gate-source voltage of 20 mV at 10 V drain voltage and 200 μA drain current, with a temperature coefficient of differential gate-source voltage of 40 μV/°C across -55°C to +125°C.

Datasheet Summary
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The IFN405 is an N-channel matched dual silicon junction field-effect transistor designed for low-noise differential and precision instrumentation amplifier applications. It is packaged in an SOIC-8 configuration with a continuous device power dissipation of 300 mW and a power derating of 4.3 mW/°C. The device operates over a temperature range of -55°C to +125°C and has a gate-source breakdown voltage of -50 V. Matching characteristics include a maximum differential gate-source voltage of 20 mV at 10 V drain voltage and 200 μA drain current, with a temperature coefficient of differential gate-source voltage of 40 μV/°C across -55°C to +125°C.

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Sheung Wan, Hong Kong
JFET JFET N-Channel Dual

JFET JFET N-Channel Dual

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number IFN405
Product Name JFET
Transistor Type JFET
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