InterFET Corporation JFET IFN3957

Description
JFET N-Channel JFET 50mA
Description
JFET N-Channel JFET 50mA
Datasheet
Datasheet Summary
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The IFN3957 is an N-channel matched dual silicon junction field-effect transistor in an SOIC-8 package, designed for differential applications. It shares the series' absolute maximum ratings: reverse gate-source and gate-drain voltage of -50 V, continuous forward gate current of 50 mA, and power dissipation of 250 mW with a derating of 2.6 mW/°C. The operating temperature range is -55°C to +125°C, and the storage temperature range is -65°C to +150°C. Differential gate-source voltage is specified at 20 mV max at 25°C with ID = 200 μA, and the drain saturation current ratio IDSS1/IDSS2 is a minimum of 0.90. The device meets no stated electrical or environmental standards beyond its thermal and voltage ratings.

Datasheet Summary
Powered by GS/AI

The IFN3957 is an N-channel matched dual silicon junction field-effect transistor in an SOIC-8 package, designed for differential applications. It shares the series' absolute maximum ratings: reverse gate-source and gate-drain voltage of -50 V, continuous forward gate current of 50 mA, and power dissipation of 250 mW with a derating of 2.6 mW/°C. The operating temperature range is -55°C to +125°C, and the storage temperature range is -65°C to +150°C. Differential gate-source voltage is specified at 20 mV max at 25°C with ID = 200 μA, and the drain saturation current ratio IDSS1/IDSS2 is a minimum of 0.90. The device meets no stated electrical or environmental standards beyond its thermal and voltage ratings.

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Sheung Wan, Hong Kong
JFET N-Channel JFET 50mA

JFET N-Channel JFET 50mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number IFN3957
Product Name JFET
Transistor Type JFET
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