InterFET Corporation JFET 2N4416

Description
JFET JFET N-Channel -30V 10mA 300mW 2mW
Description
JFET JFET N-Channel -30V 10mA 300mW 2mW
Datasheet
Datasheet Summary
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N-channel silicon junction field-effect transistor for mixer and VHF amplifier applications, housed in a TO-72 surface-mount package with pin configuration: 1 source, 2 drain, 3 gate, 4 case. Maximum reverse gate-source and gate-drain voltage is 30 V, gate current is 10 mA, and continuous power dissipation is 300 mW with a derating of 2 mW/°C. Static characteristics include a gate-source cutoff voltage range of -30 V to -6 V, drain saturation current of 5 to 15 mA, and forward transconductance of 4000 µS at 400 MHz. Input capacitance is 4 pF and output capacitance is 2 pF at 1 MHz. The device meets no specified external standards.

Datasheet Summary
Powered by GS/AI

N-channel silicon junction field-effect transistor for mixer and VHF amplifier applications, housed in a TO-72 surface-mount package with pin configuration: 1 source, 2 drain, 3 gate, 4 case. Maximum reverse gate-source and gate-drain voltage is 30 V, gate current is 10 mA, and continuous power dissipation is 300 mW with a derating of 2 mW/°C. Static characteristics include a gate-source cutoff voltage range of -30 V to -6 V, drain saturation current of 5 to 15 mA, and forward transconductance of 4000 µS at 400 MHz. Input capacitance is 4 pF and output capacitance is 2 pF at 1 MHz. The device meets no specified external standards.

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Sheung Wan, Hong Kong
JFET JFET N-Channel -30V 10mA 300mW 2mW

JFET JFET N-Channel -30V 10mA 300mW 2mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number 2N4416
Product Name JFET
Transistor Type JFET
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