The IS62WV51216EFBLL-45BLI-TR is a 512K x 16-bit low voltage, ultra low power CMOS static RAM with error correction code (ECC) capabilities. It features high-speed access times of 45ns and 55ns, making it suitable for applications requiring quick data retrieval. The device operates with a single power supply voltage range of 2.2V to 3.6V and has a maximum operating current of 35mA, with a typical standby current of 5.5µA, which contributes to its low power consumption profile. This SRAM supports a TTL compatible interface and includes optional error detection signals (ERR1 for single-bit error correction and ERR2 for double-bit error detection), enhancing data reliability. The memory is packaged in a JEDEC standard 48-pin mini BGA (6mm x 8mm) and is available in lead-free options. It is suitable for commercial, industrial, and automotive temperature ranges, making it versatile for various applications.
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 45ns 48-VFBGA (6x8)
SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-VFBGA (6x8)
IC SRAM 8MBIT PARALLEL 48VFBGA
IC SRAM 8MBIT PARALLEL 48VFBGA
| DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS62WV51216EFBLL-45BLI-TR-ND | IS62WV51216EFBLL-45BLI-TR | IS62WV51216EFBLL-45BLI-TR | IS62WV51216EFBLL-45BLI-TR |
| Product Name | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits |
