The IS61WV51216EEBLL-10B2LI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 8 megabits, organized as 512K words by 16 bits. It operates with a single power supply voltage range of 2.4V to 3.6V and offers access times of 10 nanoseconds. The device features error detection and correction capabilities, including a 1-bit error correction and a 2-bit error detection, indicated by the ERR1 and ERR2 output pins. It supports three-state outputs and is available in multiple package options, including a 48-pin mini BGA (6mm x 8mm) and various TSOP configurations. The memory is suitable for industrial and automotive applications, and it is offered in lead-free versions. This product is designed for applications requiring reliable performance and efficient power management.
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-TFBGA (6x8)
IC SRAM 8MBIT PARALLEL 48TFBGA
IC SRAM 8MBIT PARALLEL 48TFBGA
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TFBGA (6x8)
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61WV51216EEBLL-10B2LI-TR-ND | IS61WV51216EEBLL-10B2LI-TR | IS61WV51216EEBLL-10B2LI-TR | IS61WV51216EEBLL-10B2LI-TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits |
