Integrated Silicon Solution, Inc. Memory IS61WV25632BLL-10BI

Description
IC SRAM 8MBIT PARALLEL 90TFBGA
Datasheet
Description
IC SRAM 8MBIT PARALLEL 90TFBGA
Datasheet

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Description
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IC SRAM 8MBIT PARALLEL 90TFBGA

IC SRAM 8MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS61WV25632BLL-10BI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV25632BLL-10BI
Integrated Circuits (ICs) - Memory - Memory IS61WV25632BLL-10BI
IC SRAM 8MBIT PARALLEL 90TFBGA

IC SRAM 8MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61WV25632BLL-10BI IS61WV25632BLL-10BI IS61WV25632BLL-10BI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Density 8000 kbits 8000 kbits 8000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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