Integrated Silicon Solution, Inc. Memory IS61WV25632BLL-10BI

Description
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)
Datasheet
Description
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61WV25632BLL-10BI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 90-TFBGA (8x13)

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IC SRAM 8MBIT PARALLEL 90TFBGA

IC SRAM 8MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV25632BLL-10BI
Integrated Circuits (ICs) - Memory - Memory IS61WV25632BLL-10BI
IC SRAM 8MBIT PARALLEL 90TFBGA

IC SRAM 8MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61WV25632BLL-10BI IS61WV25632BLL-10BI IS61WV25632BLL-10BI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 8000 kbits 8000 kbits 8000 kbits
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