4Mb,High-Speed/Low Power,Async w
IC SRAM 4MBIT PAR
4Mb,High-Speed/Low Power,Async w
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
| ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61WV25616EFBLL-10BLI | 706-IS61WV25616EFBLL-10BLI-ND | IS61WV25616EFBLL-10BLI | IS61WV25616EFBLL-10BLI |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM - Asynchronous | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 10 ns | 10 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits |
