Integrated Silicon Solution, Inc. Memory IS61WV25616EFBLL-10BLI

Description
4Mb,High-Speed/Low Power,Async w
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Description
4Mb,High-Speed/Low Power,Async w
Request a Quote Datasheet

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4Mb,High-Speed/Low Power,Async w

4Mb,High-Speed/Low Power,Async w

Supplier's Site
Memory - 706-IS61WV25616EFBLL-10BLI-ND - DigiKey
Thief River Falls, MN, United States
IC SRAM 4MBIT PAR

IC SRAM 4MBIT PAR

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV25616EFBLL-10BLI
Integrated Circuits (ICs) - Memory - Memory IS61WV25616EFBLL-10BLI
4Mb,High-Speed/Low Power,Async w

4Mb,High-Speed/Low Power,Async w

Supplier's Site
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

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Technical Specifications

  ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61WV25616EFBLL-10BLI 706-IS61WV25616EFBLL-10BLI-ND IS61WV25616EFBLL-10BLI IS61WV25616EFBLL-10BLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM - Asynchronous SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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