Integrated Silicon Solution, Inc. Memory IS61WV25616EFBLL-10BLI

Description
IC SRAM 4MBIT PAR
Request a Quote Datasheet
Description
IC SRAM 4MBIT PAR
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Memory - 706-IS61WV25616EFBLL-10BLI-ND - DigiKey
Thief River Falls, MN, United States
IC SRAM 4MBIT PAR

IC SRAM 4MBIT PAR

Buy Now Datasheet
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

Buy Now
4Mb,High-Speed/Low Power,Async w

4Mb,High-Speed/Low Power,Async w

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV25616EFBLL-10BLI
Integrated Circuits (ICs) - Memory - Memory IS61WV25616EFBLL-10BLI
4Mb,High-Speed/Low Power,Async w

4Mb,High-Speed/Low Power,Async w

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS61WV25616EFBLL-10BLI-ND IS61WV25616EFBLL-10BLI IS61WV25616EFBLL-10BLI IS61WV25616EFBLL-10BLI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM - Asynchronous Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA 48-TFBGA
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