Integrated Silicon Solution, Inc. Memory IS61WV25616EFBLL-10BLI

Description
IC SRAM 4MBIT PAR
Request a Quote Datasheet
Description
IC SRAM 4MBIT PAR
Request a Quote Datasheet

Suppliers

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Product
Description
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Memory - 706-IS61WV25616EFBLL-10BLI-ND - DigiKey
Thief River Falls, MN, United States
IC SRAM 4MBIT PAR

IC SRAM 4MBIT PAR

Buy Now Datasheet
4Mb,High-Speed/Low Power,Async w

4Mb,High-Speed/Low Power,Async w

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV25616EFBLL-10BLI
Integrated Circuits (ICs) - Memory - Memory IS61WV25616EFBLL-10BLI
4Mb,High-Speed/Low Power,Async w

4Mb,High-Speed/Low Power,Async w

Supplier's Site
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

Buy Now

Technical Specifications

  DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS61WV25616EFBLL-10BLI-ND IS61WV25616EFBLL-10BLI IS61WV25616EFBLL-10BLI IS61WV25616EFBLL-10BLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM - Asynchronous Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 48-TFBGA 48-TFBGA BGA; 48-TFBGA
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