Integrated Silicon Solution, Inc. Memory IS61WV12816EFBLL-10TLI-TR

Description
IC SRAM 2MBIT PAR
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Description
IC SRAM 2MBIT PAR
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Datasheet
Datasheet Summary
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The IS61WV12816EFBLL-10TLI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 2M bits, organized as 128K words by 16 bits. It operates with a single power supply voltage range of 2.4V to 3.6V and features access times of 10ns. This memory device includes error detection and correction capabilities, with optional ERR1 and ERR2 output pins for indicating 1-bit and 2-bit errors, respectively. It supports three-state outputs and is suitable for industrial and automotive temperature applications. The device is available in a compact 44-pin TSOP (TYPE II) package, facilitating easy integration into various electronic designs. Its low power dissipation in standby mode enhances its efficiency for applications requiring reliable memory solutions.

Datasheet Summary
Powered by GS/AI

The IS61WV12816EFBLL-10TLI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 2M bits, organized as 128K words by 16 bits. It operates with a single power supply voltage range of 2.4V to 3.6V and features access times of 10ns. This memory device includes error detection and correction capabilities, with optional ERR1 and ERR2 output pins for indicating 1-bit and 2-bit errors, respectively. It supports three-state outputs and is suitable for industrial and automotive temperature applications. The device is available in a compact 44-pin TSOP (TYPE II) package, facilitating easy integration into various electronic designs. Its low power dissipation in standby mode enhances its efficiency for applications requiring reliable memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS61WV12816EFBLL-10TLI-TR-ND - DigiKey
Thief River Falls, MN, United States
IC SRAM 2MBIT PAR

IC SRAM 2MBIT PAR

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SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV12816EFBLL-10TLI-TR
Integrated Circuits (ICs) - Memory - Memory IS61WV12816EFBLL-10TLI-TR
2Mb,High-Speed,Async with ECC,12

2Mb,High-Speed,Async with ECC,12

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Technical Specifications

  DigiKey Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 706-IS61WV12816EFBLL-10TLI-TR-ND IS61WV12816EFBLL-10TLI-TR IS61WV12816EFBLL-10TLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2000 kbits 2000 kbits 2000 kbits
Package Type TSOP; "44-TSOP (0.400"", 10.16mm Width)" 44-TSOP (0.400\", 10.16mm Width) 44-TSOP II
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