The IS61WV12816EFBLL-10TLI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 2M bits, organized as 128K words by 16 bits. It operates with a single power supply voltage range of 2.4V to 3.6V and features access times of 10ns. This memory device includes error detection and correction capabilities, with optional ERR1 and ERR2 output pins for indicating 1-bit and 2-bit errors, respectively. It supports three-state outputs and is suitable for industrial and automotive temperature applications. The device is available in a compact 44-pin TSOP (TYPE II) package, facilitating easy integration into various electronic designs. Its low power dissipation in standby mode enhances its efficiency for applications requiring reliable memory solutions.
IC SRAM 2MBIT PAR
SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II
2Mb,High-Speed,Async
| DigiKey | Quarktwin Technology Ltd. | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 706-IS61WV12816EFBLL-10TLI-TR-ND | IS61WV12816EFBLL-10TLI-TR | IS61WV12816EFBLL-10TLI-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 2000 kbits | 2000 kbits | 2000 kbits |
| Package Type | TSOP; "44-TSOP (0.400"", 10.16mm Width)" | 44-TSOP (0.400\", 10.16mm Width) | 44-TSOP II |
