Integrated Silicon Solution, Inc. Memory IS61WV102416EDBLL-10B2LI-TR

Description
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TFBGA (6x8)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TFBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61WV102416EDBLL-10B2LI-TR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV102416EDBLL-10B2LI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV102416EDBLL-10B2LI-TR
Integrated Circuits (ICs) - Memory - Memory IS61WV102416EDBLL-10B2LI-TR
IC SRAM 16MBIT PARALLEL 48TFBGA

IC SRAM 16MBIT PARALLEL 48TFBGA

Supplier's Site
SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 16MBIT PARALLEL 48TFBGA

IC SRAM 16MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61WV102416EDBLL-10B2LI-TR-ND IS61WV102416EDBLL-10B2LI-TR IS61WV102416EDBLL-10B2LI-TR IS61WV102416EDBLL-10B2LI-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8961415QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 45 ns
Density 1000 kbits
View Details
Memory - 568760-001-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details