Integrated Silicon Solution, Inc. Memory IS61NLP51236-200B3LI

Description
IC SRAM 18MBIT PARALLEL 165TFBGA
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Description
IC SRAM 18MBIT PARALLEL 165TFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
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IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet
Memory - IS61NLP51236-200B3LI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

Buy Now Datasheet
Memory - SRAM - IS61NLP51236-200B3LI - 1189246-IS61NLP51236-200B3LI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IS61NLP51236-200B3LI
1189246-IS61NLP51236-200B3LI
Memory - SRAM - IS61NLP51236-200B3LI 1189246-IS61NLP51236-200B3LI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 1189246-IS61NLP51236 -200B3LI Packaging: Tray Mounting Style: SMD Technology: SRAM - Synchronous Memory Type: Volatile Memory Size: 18Mb (512K x 36) Access Time: 3.1ns Categories: Integrated Circuits Supplier Device Package: 165-TFBGA (13x15) Status: Obsolete Temperature Range - Operating: -40°C ~ 85°C Memory Format: SRAM Manufacturer Homepage: www.issi.com Clock Frequency: 200MHz Memory Interface: Parallel Manufacturer Package: 165-TFBGA Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 144 MSL Level: 2 (1 Year) Supply Voltage (V): 3.135V ~ 3.465V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1189246-IS61NLP51236-200B3LI
Packaging: Tray
Mounting Style: SMD
Technology: SRAM - Synchronous
Memory Type: Volatile
Memory Size: 18Mb (512K x 36)
Access Time: 3.1ns
Categories: Integrated Circuits
Supplier Device Package: 165-TFBGA (13x15)
Status: Obsolete
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: SRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 200MHz
Memory Interface: Parallel
Manufacturer Package: 165-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 144
MSL Level: 2 (1 Year)
Supply Voltage (V): 3.135V ~ 3.465V

Buy Now
Memory - IS61NLP51236-200B3LI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61NLP51236-200B3LI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61NLP51236-200B3LI
Integrated Circuits (ICs) - Memory - Memory IS61NLP51236-200B3LI
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61NLP51236-200B3LI IS61NLP51236-200B3LI-ND 1189246-IS61NLP51236-200B3LI IS61NLP51236-200B3LI IS61NLP51236-200B3LI IS61NLP51236-200B3LI
Product Name Memory Memory Memory - SRAM - IS61NLP51236-200B3LI Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM - Synchronous, SDR; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 200 MHz
Access Time 3.1 ns 3.1 ns 3.1 ns 3.1 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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