The IS61LPS51236B-200TQLI-TR is a 512K x 36-bit synchronous pipelined static RAM, offering a total memory capacity of 18Mb. It operates at a clock frequency of 200 MHz with a clock access time of 3.0 ns and a cycle time of 5 ns. This memory device features an internal self-timed write cycle, allowing for flexible write operations with individual byte control and global write capabilities. The device supports burst sequence control through a mode input, enabling either linear or interleaved burst modes. It includes three chip enable options for easy depth expansion and address pipelining. The IS61LPS51236B is designed for low power consumption, with an auto power-down feature during deselect and a snooze mode for reduced-power standby. It is available in a 100-pin LQFP package and is suitable for commercial, industrial, and automotive applications. The power supply requirements are 3.3V for V_DD and either 3.3V or 2.5V for V_DDQ, depending on the configuration. This product is lead-free, aligning with modern environmental standards.
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns 100-LQFP (14x20)
IC SRAM 18MBIT PARALLEL 100LQFP
IC SRAM 18MBIT PARALLEL 100LQFP
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3 ns 100-LQFP (14x20)
| DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61LPS51236B-200TQLI-TR-ND | IS61LPS51236B-200TQLI-TR | IS61LPS51236B-200TQLI-TR | IS61LPS51236B-200TQLI-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 18000 kbits | 18000 kbits | 18000 kbits | 18000 kbits |
| Package Type | 100-LQFP | QFP; 100-LQFP |