Integrated Silicon Solution, Inc. Memory IS61LPS51236B-200TQLI-TR

Description
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns 100-LQFP (14x20)
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Description
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns 100-LQFP (14x20)
Request a Quote
Datasheet
Datasheet Summary
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The IS61LPS51236B-200TQLI-TR is a 512K x 36-bit synchronous pipelined static RAM, offering a total memory capacity of 18Mb. It operates at a clock frequency of 200 MHz with a clock access time of 3.0 ns and a cycle time of 5 ns. This memory device features an internal self-timed write cycle, allowing for flexible write operations with individual byte control and global write capabilities. The device supports burst sequence control through a mode input, enabling either linear or interleaved burst modes. It includes three chip enable options for easy depth expansion and address pipelining. The IS61LPS51236B is designed for low power consumption, with an auto power-down feature during deselect and a snooze mode for reduced-power standby. It is available in a 100-pin LQFP package and is suitable for commercial, industrial, and automotive applications. The power supply requirements are 3.3V for V_DD and either 3.3V or 2.5V for V_DDQ, depending on the configuration. This product is lead-free, aligning with modern environmental standards.

Datasheet Summary
Powered by GS/AI

The IS61LPS51236B-200TQLI-TR is a 512K x 36-bit synchronous pipelined static RAM, offering a total memory capacity of 18Mb. It operates at a clock frequency of 200 MHz with a clock access time of 3.0 ns and a cycle time of 5 ns. This memory device features an internal self-timed write cycle, allowing for flexible write operations with individual byte control and global write capabilities. The device supports burst sequence control through a mode input, enabling either linear or interleaved burst modes. It includes three chip enable options for easy depth expansion and address pipelining. The IS61LPS51236B is designed for low power consumption, with an auto power-down feature during deselect and a snooze mode for reduced-power standby. It is available in a 100-pin LQFP package and is suitable for commercial, industrial, and automotive applications. The power supply requirements are 3.3V for V_DD and either 3.3V or 2.5V for V_DDQ, depending on the configuration. This product is lead-free, aligning with modern environmental standards.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61LPS51236B-200TQLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns 100-LQFP (14x20)

SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns 100-LQFP (14x20)

Buy Now Datasheet
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3 ns 100-LQFP (14x20)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3 ns 100-LQFP (14x20)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61LPS51236B-200TQLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61LPS51236B-200TQLI-TR
Integrated Circuits (ICs) - Memory - Memory IS61LPS51236B-200TQLI-TR
IC SRAM 18MBIT PARALLEL 100LQFP

IC SRAM 18MBIT PARALLEL 100LQFP

Supplier's Site
IC SRAM 18MBIT PARALLEL 100LQFP

IC SRAM 18MBIT PARALLEL 100LQFP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61LPS51236B-200TQLI-TR-ND IS61LPS51236B-200TQLI-TR IS61LPS51236B-200TQLI-TR IS61LPS51236B-200TQLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type 100-LQFP QFP; 100-LQFP
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