The IS61LPS25618A-200B2I is a high-speed, low-power synchronous static RAM with a capacity of 256K words organized as 18 bits. It operates at a frequency of 200 MHz and features a clock access time of 3.1 ns, making it suitable for applications requiring fast data access. The device supports individual byte write control and global write capabilities, allowing for flexible data management. It includes a self-timed write cycle and can initiate burst sequences through ADSP or ADSC inputs, with the mode pin allowing selection between linear and interleave burst orders. The memory is available in a 119-ball BGA package and operates with a power supply of 3.3V for core and I/O. Additionally, it offers an auto power-down feature during deselect and a snooze mode for reduced power consumption during standby. This product is designed for communication and networking applications, making it a viable option for engineers seeking efficient memory solutions.
SRAM - Synchronous, SDR Memory IC 4.5Mb (256K x 18) Parallel 200MHz 3.1ns 119-PBGA (14x22)
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
IC SRAM 4.5MBIT PARALLEL 119PBGA
IC SRAM 4.5MBIT PAR 119PBGA
| DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61LPS25618A-200B2I-ND | IS61LPS25618A-200B2I | IS61LPS25618A-200B2I | IS61LPS25618A-200B2I |
| Product Name | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 4500 kbits | 4500 kbits | 4500 kbits | 4500 kbits |
| Package Type | 119-BBGA | BGA; 119-BBGA | BGA |
