Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS61DDP2B251236A-400M3L

The IS61DDP2B251236A-400M3L is an 18Mb synchronous static random access memory (SRAM) device from Quarktwin Technology Ltd. It features a double data rate (DDR) interface with a 2.0 cycle read latency, allowing for efficient read and write operations. The memory is organized in a 512Kx36 configuration and supports a common I/O bus for simultaneous read and write operations. This SRAM includes an on-chip Delay-Locked Loop (DLL) to enhance data validity and offers a fixed 2-bit burst for both read and write operations. It operates with a core power supply of +1.8V and supports HSTL input/output interfaces. The device is packaged in a fine ball grid array (FBGA) format, with dimensions of 15mm x 17mm and 165 balls, making it suitable for compact designs. Additional features include registered addresses and control signals, byte write capability, and optional on-die termination (ODT) for improved signal integrity. The device is designed for high-performance applications where speed and reliability are critical.