18Mb, DDR IIP (Burst of 2) CIO, Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
SRAM - Synchronous, DDR IIP Memory IC 18Mbit Parallel 400 MHz 165-LFBGA (15x17)
IC SRAM 18MBIT PARALLEL 165LFBGA
IC SRAM 18MBIT PARALLEL 165LFBGA
| Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 77T0710 | IS61DDP2B21M18A-400M3L | IS61DDP2B21M18A-400M3L | IS61DDP2B21M18A-400M3L |
| Product Name | 18Mb, Ddr Iip (Burst Of 2) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | |||
| Density | 18000 kbits | 18000 kbits | 18000 kbits |
