Integrated Silicon Solution, Inc. 18Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 512K X 36, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) IS61DDB251236A-250M3L

The IS61DDB251236A-250M3L is an 18Mb synchronous static random access memory (SRAM) device from Quarktwin Technology Ltd. It features a double data rate (DDR) interface with a burst length of 2, allowing for efficient read and write operations. The device operates at a clock speed of 250 MHz and is designed with a common I/O bus for simultaneous read and write capabilities. This SRAM includes an on-chip delay-locked loop (DLL) to enhance data validity and supports clock stop functionality. It requires a core power supply of +1.8V and a VDDQ supply ranging from 1.5V to 1.8V, making it compatible with HSTL I/O interfaces. The device is packaged in a fine ball grid array (FBGA) format, measuring 15mm x 17mm with 165 balls. The IS61DDB251236A-250M3L supports registered addresses and control signals, allowing for byte write operations and full data coherency. It also includes boundary scan capabilities using JTAG functions. This product is suitable for applications requiring high-speed memory with efficient data handling.