The IS61DDB251236A-250M3L is an 18Mb synchronous static random access memory (SRAM) device from Quarktwin Technology Ltd. It features a double data rate (DDR) interface with a burst length of 2, allowing for efficient read and write operations. The device operates at a clock speed of 250 MHz and is designed with a common I/O bus for simultaneous read and write capabilities. This SRAM includes an on-chip delay-locked loop (DLL) to enhance data validity and supports clock stop functionality. It requires a core power supply of +1.8V and a VDDQ supply ranging from 1.5V to 1.8V, making it compatible with HSTL I/O interfaces. The device is packaged in a fine ball grid array (FBGA) format, measuring 15mm x 17mm with 165 balls. The IS61DDB251236A-250M3L supports registered addresses and control signals, allowing for byte write operations and full data coherency. It also includes boundary scan capabilities using JTAG functions. This product is suitable for applications requiring high-speed memory with efficient data handling.
18Mb, DDR II (Burst of 2) CIO, Sync SRAM, 512K x 36, 165 Ball FBGA (15x17 mm), RoHS
IC SRAM 18MBIT PARALLEL 165LFBGA
SRAM - Synchronous, DDR II Memory IC 18Mbit Parallel 250 MHz 165-LFBGA (15x17)
IC SRAM 18MBIT PARALLEL 165LFBGA
| Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 77T0691 | IS61DDB251236A-250M3L | IS61DDB251236A-250M3L | IS61DDB251236A-250M3L |
| Product Name | 18Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 512K X 36, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
