Integrated Silicon Solution, Inc. Memory IS49NLS96400-25BL

Description
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)
Datasheet
Description
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)
Datasheet

Suppliers

Company
Product
Description
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Memory - IS49NLS96400-25BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS49NLS96400-25BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLS96400-25BL
Integrated Circuits (ICs) - Memory IS49NLS96400-25BL
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLS96400-25BL IS49NLS96400-25BL IS49NLS96400-25BL
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 576000 kbits 576000 kbits 576000 kbits
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