Integrated Silicon Solution, Inc. Memory IS49NLC93200-25BLI

Description
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)
Datasheet
Description
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49NLC93200-25BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)

Buy Now Datasheet
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS49NLC93200-25BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLC93200-25BLI
Integrated Circuits (ICs) - Memory IS49NLC93200-25BLI
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLC93200-25BLI IS49NLC93200-25BLI IS49NLC93200-25BLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 288000 kbits 288000 kbits 288000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 051AL016J70TFI020 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS4SD4M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - 10415FC10 - Acme Chip Technology Co., Limited
Specs
Memory Category Volatile; SRAM Chip
Cycle Time 10 ns
Density 1 kbits
View Details
2 suppliers