Integrated Silicon Solution, Inc. Memory IS43TR82560D-125KBLI

Description
SDRAM - DDR3 Memory IC 2Gb (256M x 8) Parallel 800MHz 20ns 78-TWBGA (8x10.5)
Request a Quote Datasheet
Description
SDRAM - DDR3 Memory IC 2Gb (256M x 8) Parallel 800MHz 20ns 78-TWBGA (8x10.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43TR82560D-125KBLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3 Memory IC 2Gb (256M x 8) Parallel 800MHz 20ns 78-TWBGA (8x10.5)

SDRAM - DDR3 Memory IC 2Gb (256M x 8) Parallel 800MHz 20ns 78-TWBGA (8x10.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS43TR82560D-125KBLI - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-IS43TR82560D-125KBLI
Memory IC and Storage Component 774-IS43TR82560D-125KBLI
IC DRAM 2GBIT PARALLEL 78TWBGA Product overview: IS43TR82560D-125KBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR82560D-125 KBLI can be used for catalog matching and distributor lookup.

IC DRAM 2GBIT PARALLEL 78TWBGA Product overview: IS43TR82560D-125KBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR82560D-125KBLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IS43TR82560D-125KBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 78-TWBGA (8x10.5)

SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 78-TWBGA (8x10.5)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 78TWBGA

IC DRAM 2GBIT PARALLEL 78TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43TR82560D-125KBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43TR82560D-125KBLI
Integrated Circuits (ICs) - Memory IS43TR82560D-125KBLI
IC DRAM 2GBIT PARALLEL 78TWBGA

IC DRAM 2GBIT PARALLEL 78TWBGA

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS43TR82560D-125KBLI-ND 774-IS43TR82560D-125KBLI IS43TR82560D-125KBLI IS43TR82560D-125KBLI IS43TR82560D-125KBLI
Product Name Memory Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 C (-40 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 78-TFBGA BGA; 78-TFBGA BGA
Supply Voltage 1.425V ~ 1.575V 1.425 1.425V ~ 1.575V 1.425V ~ 1.575V
Access Time 0.2250 ns 20 ns 20 ns 20 ns
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