Integrated Silicon Solution, Inc. DRAM IS43TR82560CL-125KBL

Description
Category: DRAM Win Source Part Number: 1446553-IS43TR82560C L-125KBL Manufacturer: ISSI, Integrated Silicon Solution Inc
Request a Quote Datasheet
Description
Category: DRAM Win Source Part Number: 1446553-IS43TR82560C L-125KBL Manufacturer: ISSI, Integrated Silicon Solution Inc
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DRAM - 1446553-IS43TR82560CL-125KBL - Win Source Electronics
Laguna Hills, CA, United States
Category: DRAM Win Source Part Number: 1446553-IS43TR82560C L-125KBL Manufacturer: ISSI, Integrated Silicon Solution Inc

Category: DRAM
Win Source Part Number: 1446553-IS43TR82560CL-125KBL
Manufacturer: ISSI, Integrated Silicon Solution Inc

Buy Now
Memory - 706-IS43TR82560CL-125KBL-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 2GBIT PARALLEL 78TWBGA

IC DRAM 2GBIT PARALLEL 78TWBGA

Buy Now Datasheet
1.35V Memory IC and Storage Component - 774-IS43TR82560CL-125KBL - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
1.35V Memory IC and Storage Component
774-IS43TR82560CL-125KBL
1.35V Memory IC and Storage Component 774-IS43TR82560CL-125KBL
2G, 1.35V, DDR3L, 256Mx8, 1600MT Product overview: IS43TR82560CL-125KBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR82560CL-12 5KBL can be used for catalog matching and distributor lookup.

2G, 1.35V, DDR3L, 256Mx8, 1600MT Product overview: IS43TR82560CL-125KBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43TR82560CL-125KBL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IS43TR82560CL-125KBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-TWBGA (8x10.5)

SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-TWBGA (8x10.5)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS43TR82560CL-125KBL
Integrated Circuits (ICs) - Memory - Memory IS43TR82560CL-125KBL
2G, 1.35V, DDR3L, 256Mx8, 1600MT

2G, 1.35V, DDR3L, 256Mx8, 1600MT

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1446553-IS43TR82560CL-125KBL 706-IS43TR82560CL-125KBL-ND 774-IS43TR82560CL-125KBL IS43TR82560CL-125KBL IS43TR82560CL-125KBL
Product Name DRAM Memory 1.35V Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 C (32 F) 0 to 95 C (32 to 203 F)
Package Type 78-TFBGA BGA; 78-TFBGA BGA; 78-TWBGA (8x10.5)
Supply Voltage 1.283V ~ 1.45V 1.283 1.283V ~ 1.45V 0degC ~ 95degC (TC)
Access Time 0.2250 ns 20 ns
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