Integrated Silicon Solution, Inc. Memory IS43TR16512B-107MBLI

Description
IC DRAM 8GBIT PARALLEL 96TWBGA
Request a Quote Datasheet
Description
IC DRAM 8GBIT PARALLEL 96TWBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43TR16512B-107MBLI-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 8GBIT PARALLEL 96TWBGA

IC DRAM 8GBIT PARALLEL 96TWBGA

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS43TR16512B-107MBLI
Integrated Circuits (ICs) - Memory - Memory IS43TR16512B-107MBLI
8G, 1.5V, DDR3, 512Mx16, 1866MT/

8G, 1.5V, DDR3, 512Mx16, 1866MT/

Supplier's Site
Memory - IS43TR16512B-107MBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 8Gbit Parallel 933 MHz 20 ns 96-TWBGA (10x14)

SDRAM - DDR3 Memory IC 8Gbit Parallel 933 MHz 20 ns 96-TWBGA (10x14)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 706-IS43TR16512B-107MBLI-ND IS43TR16512B-107MBLI IS43TR16512B-107MBLI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 96-TFBGA BGA; 96-TFBGA
Supply Voltage 1.425V ~ 1.575V Surface Mount 1.425V ~ 1.575V
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