IC DRAM 512MBIT PAR 60TFBGA Product overview: IS43R86400E-6BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43R86400E-6BLI
Win Source Part Number: 1355101-IS43R86400E-
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 35 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Product Status: Active
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x13)
Base Product Number: IS43R86400
Technology: SDRAM - DDR
Mounting Type: Surface Mount
HTSUS: 8542.32.0028
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 2.3V ~ 2.7V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 512Mbit
Memory Organization: 64M x 8
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700 ps
IC DRAM 512MBIT PARALLEL 60TFBGA
IC DRAM 512MBIT PARALLEL 60TFBGA
SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-TFBGA (8x13)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43R86400E-6BLI-TR | 1355101-IS43R86400E-6BLI-TR | IS43R86400E-6BLI-TR | IS43R86400E-6BLI-TR | IS43R86400E-6BLI-TR |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns |
| Cycle Time | 15 ns | 15 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
