IC DRAM 256MBIT PAR 144LFBGA
256M, 2.5V, DDR, 8Mx32, 166MHz, 144-ball BGA (12Mm x 12mm) RoHS, T&R
SDRAM - DDR Memory IC 256Mbit Parallel 166 MHz 700 ps 144-LFBGA (12x12)
IC DRAM 256MBIT PAR 144LFBGA
| Lingto Electronic Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS43R32800D-6BL-TR | 18W6829 | IS43R32800D-6BL-TR | IS43R32800D-6BL-TR |
| Product Name | Memory | 256M, 2.5V, Ddr, 8Mx32, 166Mhz, 144-Ball Bga (12Mm X 12Mm) Rohs, T&r Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | |
| Density | 256000 kbits | 256000 kbits | 256000 kbits | |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
