128M, 2.5v, DDR, 4Mx32, 200MHz @ CL3, 144-ball BGA (12Mm x 12mm) RoHS, T&R
SDRAM - DDR Memory IC 128Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)
IC DRAM 128MBIT PAR 144LFBGA
IC DRAM 128MBIT PAR 144LFBGA
| Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 77T0577 | IS43R32400E-5BL-TR | IS43R32400E-5BL-TR | IS43R32400E-5BL-TR |
| Product Name | 128M, 2.5V, Ddr, 4Mx32, 200Mhz @ Cl3, 144-Ball Bga (12Mm X 12Mm) Rohs, T&r Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits |
