Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS43R32160D-5BLI-TR

Description
IC DRAM 512MBIT PAR 144LFBGA
Datasheet
Description
IC DRAM 512MBIT PAR 144LFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS43R32160D-5BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R32160D-5BLI-TR
Integrated Circuits (ICs) - Memory IS43R32160D-5BLI-TR
IC DRAM 512MBIT PAR 144LFBGA

IC DRAM 512MBIT PAR 144LFBGA

Supplier's Site
Memory - IS43R32160D-5BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

Buy Now Datasheet
IC DRAM 512MBIT PAR 144LFBGA

IC DRAM 512MBIT PAR 144LFBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43R32160D-5BLI-TR IS43R32160D-5BLI-TR IS43R32160D-5BLI-TR
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-3417-01 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers