Integrated Silicon Solution, Inc. Memory IS43R32160D-5BLI-TR

Description
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)
Datasheet
Description
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43R32160D-5BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43R32160D-5BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R32160D-5BLI-TR
Integrated Circuits (ICs) - Memory IS43R32160D-5BLI-TR
IC DRAM 512MBIT PAR 144LFBGA

IC DRAM 512MBIT PAR 144LFBGA

Supplier's Site
IC DRAM 512MBIT PAR 144LFBGA

IC DRAM 512MBIT PAR 144LFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43R32160D-5BLI-TR IS43R32160D-5BLI-TR IS43R32160D-5BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
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