Integrated Silicon Solution, Inc. Memory IS43R32160D-5BLI-TR

Description
IC DRAM 512MBIT PAR 144LFBGA
Datasheet
Description
IC DRAM 512MBIT PAR 144LFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PAR 144LFBGA

IC DRAM 512MBIT PAR 144LFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43R32160D-5BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R32160D-5BLI-TR
Integrated Circuits (ICs) - Memory IS43R32160D-5BLI-TR
IC DRAM 512MBIT PAR 144LFBGA

IC DRAM 512MBIT PAR 144LFBGA

Supplier's Site
Memory - IS43R32160D-5BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 144-LFBGA (12x12)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43R32160D-5BLI-TR IS43R32160D-5BLI-TR IS43R32160D-5BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Data Rate 200 MHz
Unlock Full Specs
to access all available technical data

Similar Products

 - 9403ASDMQB - Rochester Electronics
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers
Flash Memory - 1882648P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 520966230597 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers