Integrated Silicon Solution, Inc. Memory IS43R16800E-6TL

Description
SDRAM - DDR Memory IC 128Mb (8M x 16) Parallel 166MHz 700ps 66-TSOP II
Request a Quote Datasheet
Description
SDRAM - DDR Memory IC 128Mb (8M x 16) Parallel 166MHz 700ps 66-TSOP II
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43R16800E-6TL-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 128Mb (8M x 16) Parallel 166MHz 700ps 66-TSOP II

SDRAM - DDR Memory IC 128Mb (8M x 16) Parallel 166MHz 700ps 66-TSOP II

Buy Now Datasheet
Memory IC and Storage Component - 774-IS43R16800E-6TL - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS43R16800E-6TL
Memory IC and Storage Component 774-IS43R16800E-6TL
IC DRAM 128MBIT PAR 66TSOP II Product overview: IS43R16800E-6TL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43R16800E-6TL can be used for catalog matching and distributor lookup.

IC DRAM 128MBIT PAR 66TSOP II Product overview: IS43R16800E-6TL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43R16800E-6TL can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - SDRAM - IS43R16800E-6TL - 808825-IS43R16800E-6TL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43R16800E-6TL
808825-IS43R16800E-6TL
Memory - SDRAM - IS43R16800E-6TL 808825-IS43R16800E-6TL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 808825-IS43R16800E-6 TL Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR Memory Type: Volatile Memory Size: 128Mb (8M x 16) Access Time: 700ps Supplier Device Package: 66-TSOP II Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Manufacturer Package: 66-TSSOP Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 108 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.3V ~ 2.7V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 808825-IS43R16800E-6TL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 128Mb (8M x 16)
Access Time: 700ps
Supplier Device Package: 66-TSOP II
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Manufacturer Package: 66-TSSOP
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 108
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.3V ~ 2.7V

Buy Now
Memory - IS43R16800E-6TL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 128Mbit Parallel 166 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 128Mbit Parallel 166 MHz 700 ps 66-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43R16800E-6TL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43R16800E-6TL
Integrated Circuits (ICs) - Memory IS43R16800E-6TL
IC DRAM 128MBIT PAR 66TSOP II

IC DRAM 128MBIT PAR 66TSOP II

Supplier's Site
IC DRAM 128MBIT PAR 66TSOP II

IC DRAM 128MBIT PAR 66TSOP II

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43R16800E-6TL-ND 774-IS43R16800E-6TL 808825-IS43R16800E-6TL IS43R16800E-6TL IS43R16800E-6TL IS43R16800E-6TL
Product Name Memory Memory IC and Storage Component Memory - SDRAM - IS43R16800E-6TL Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 C (32 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type TSSOP; "66-TSSOP (0.400"", 10.16mm Width)" SSOP SSOP; TSSOP; 66-TSSOP (0.400\", 10.16mm Width) SSOP; TSSOP
Supply Voltage 2.3V ~ 2.7V 2.3 2.3V ~ 2.7V 2.3V ~ 2.7V 2.3V ~ 2.7V
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