IC DRAM 256MBIT PAR 90TFBGA Product overview: IS43LR32800G-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43LR32800G-6BL
Win Source Part Number: 1221298-IS43LR32800G
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 240
Mounting: SMD (SMT)
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 256Mb (8M x 32)
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS43LR32800G6BLI;
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS43LR32800
SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
IC DRAM 256MBIT PARALLEL 90TFBGA
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
IC DRAM 256MBIT PARALLEL 90TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43LR32800G-6BLI | 1221298-IS43LR32800G-6BLI | IS43LR32800G-6BLI-ND | IS43LR32800G-6BLI | IS43LR32800G-6BLI | IS43LR32800G-6BLI | IS43LR32800G-6BLI |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | SDRAM - Mobile LPDDR; DRAM Chip |
| Access Time | 8 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | |
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | |
| Number of Words | 2000 k |
