Integrated Silicon Solution, Inc. Memory IS43LR32200B-6BLI-TR

Description
SDRAM - Mobile LPDDR Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43LR32200B-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
Memory - IS43LR32200B-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43LR32200B-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR32200B-6BLI-TR
Integrated Circuits (ICs) - Memory IS43LR32200B-6BLI-TR
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43LR32200B-6BLI-TR-ND IS43LR32200B-6BLI-TR IS43LR32200B-6BLI-TR IS43LR32200B-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 7164L20TPGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details
Flash Memory - 1882794P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Integrated Circuits (ICs) - Memory - Memory - 93Z451LMQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category PROM; Non-Volatile
Density 8 kbits
Supply Voltage -55degC ~ 125degC (TC)
View Details
2 suppliers