Integrated Silicon Solution, Inc. Memory IS43LR16640A-5BLI-TR

Description
IC DRAM 1GBIT PARALLEL 60TWBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60TWBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43LR16640A-5BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43LR16640A-5BLI-TR
Integrated Circuits (ICs) - Memory IS43LR16640A-5BLI-TR
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site
Memory - IS43LR16640A-5BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-TWBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-TWBGA (8x10)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43LR16640A-5BLI-TR IS43LR16640A-5BLI-TR IS43LR16640A-5BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns 5 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Data Rate 200 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882519 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - JM38510/23103BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - 8 611 200 742 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details