Integrated Silicon Solution, Inc. Memory IS43LQ32640A-062TBLI

Description
IC DRAM 2GBIT LVSTL 200TFBGA
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Description
IC DRAM 2GBIT LVSTL 200TFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS43LQ32640A-062TBLI-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 2GBIT LVSTL 200TFBGA

IC DRAM 2GBIT LVSTL 200TFBGA

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Memory - IS43LQ32640A-062TBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-TFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-TFBGA (10x14.5)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS43LQ32640A-062TBLI
Integrated Circuits (ICs) - Memory - Memory IS43LQ32640A-062TBLI
2G, 0.57-0.65V/1.06-1.17 /1.70-1.

2G, 0.57-0.65V/1.06-1.17/1.70-1.

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 706-IS43LQ32640A-062TBLI-ND IS43LQ32640A-062TBLI IS43LQ32640A-062TBLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 200-TFBGA BGA; 200-TFBGA BGA; 200-TFBGA (10x14.5)
Supply Voltage 1.06V ~ 1.17V, 1.7V ~ 1.95V 1.06V ~ 1.17V, 1.7V ~ 1.95V -40degC ~ 95degC (TC)
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