IC DRAM 4GBIT PARALLEL 200VFBGA Product overview: IS43LQ16256A-062BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43LQ16256A-062
Win Source Part Number: 942861-IS43LQ16256A-
Series: *
Categories: Memory
IC DRAM 4GBIT PARALLEL 200VFBGA
IC DRAM 4GBIT PARALLEL 200VFBGA
SDRAM - Mobile LPDDR4 Memory IC 4Gbit Parallel 1.6 GHz 200-VFBGA (10x14.5)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43LQ16256A-062BLI | 942861-IS43LQ16256A-062BLI | IS43LQ16256A-062BLI | IS43LQ16256A-062BLI | IS43LQ16256A-062BLI |
| Product Name | Memory IC and Storage Component | Memory - DDR - IS43LQ16256A-062BLI | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 3.5 ns | ||||
| Operating Temperature | -40 C (-40 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | ||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | |
| Number of Words | 32000 k |
