SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.5ns 90-LFBGA (8x13)
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 133602-IS42S32800B-7
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 256Mb (8M x 32)
Access Time: 5.5ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 90-LFBGA (8x13)
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: DRAM
Max Frequency: 143MHz
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
IC DRAM 256MBIT PAR 90LFBGA Product overview: IS42S32800B-7BL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32800B-7BL can be used for catalog matching and distributor lookup.
IC DRAM 256MBIT PAR 90LFBGA
IC DRAM 256MBIT PARALLEL 90LFBGA
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.5 ns 90-LFBGA (8x13)
SDRAM, 256MBIT, 143MHZ, BGA-90; DRAM Type:SDR; DRAM Density:256Mbit; DRAM Memory Configuration:4 BLK (2M x 32); Clock Frequency:143MHz; Memory Case Style:BGA; No. of Pins:90Pins; Supply Voltage Nom:3.3V; Access Time:7ns RoHS Compliant: Yes
IC DRAM 256MBIT PARALLEL 90LFBGA
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 706-1024-ND | 133602-IS42S32800B-7BL | 774-IS42S32800B-7BL | IS42S32800B-7BL | IS42S32800B-7BL | IS42S32800B-7BL | 43M4981 | IS42S32800B-7BL |
| Product Name | Memory | Memory - SDRAM - IS42S32800B-7BL | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Sdram, 256Mbit, 143Mhz, Bga-90; Dram Type Integrated Silicon Solution (Issi) | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | SDRAM; DRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | ||
| Package Type | 90-LFBGA | BGA; 90-LFBGA (8x13) | BGA; Tray | BGA; 90-LFBGA | BGA | 90-LFBGA | ||
| Supply Voltage | 3V ~ 3.6V | 3 V ~ 3.6 V | 3.6V; 3V ~ 3.6V | Surface Mount | 3.6V; 3V ~ 3.6V | 3V ~ 3.6V |
