Integrated Silicon Solution, Inc. Memory IS42S32160F-7BLI

Description
SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-1365-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS42S32160F-7BLI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS42S32160F-7BLI
Memory IC and Storage Component 774-IS42S32160F-7BLI
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160F-7BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160F-7BLI can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160F-7BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160F-7BLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SD - IS42S32160F-7BLI - 945808-IS42S32160F-7BLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SD - IS42S32160F-7BLI
945808-IS42S32160F-7BLI
Memory - SD - IS42S32160F-7BLI 945808-IS42S32160F-7BLI
Win Source Part Number: 945808-IS42S32160F-7 BLI Series: * Categories: Memory

Win Source Part Number: 945808-IS42S32160F-7BLI
Series: *
Categories: Memory

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Integrated Circuits (ICs) - Memory - Memory - IS42S32160F-7BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS42S32160F-7BLI
Integrated Circuits (ICs) - Memory - Memory IS42S32160F-7BLI
IC DRAM 512MBIT PAR 90TFBGA

IC DRAM 512MBIT PAR 90TFBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Sdram, 512Mbit, 143Mhz, Bga-90; Dram Memory Configuration Integrated Silicon Solution (Issi) - 65AC6009 - Newark, An Avnet Company
Chicago, IL, United States
Sdram, 512Mbit, 143Mhz, Bga-90; Dram Memory Configuration Integrated Silicon Solution (Issi)
65AC6009
Sdram, 512Mbit, 143Mhz, Bga-90; Dram Memory Configuration Integrated Silicon Solution (Issi) 65AC6009
SDRAM, 512MBIT, 143MHZ, BGA-90; DRAM Memory Configuration:16M x 32bit; Memory Case Style:BGA; No. of Pins:90Pins; IC Interface Type:Parallel; Access Time:5.4ns; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature RoHS Compliant: Yes

SDRAM, 512MBIT, 143MHZ, BGA-90; DRAM Memory Configuration:16M x 32bit; Memory Case Style:BGA; No. of Pins:90Pins; IC Interface Type:Parallel; Access Time:5.4ns; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - IS42S32160F-7BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-1365-ND 774-IS42S32160F-7BLI 945808-IS42S32160F-7BLI IS42S32160F-7BLI IS42S32160F-7BLI 65AC6009 IS42S32160F-7BLI IS42S32160F-7BLI
Product Name Memory Memory IC and Storage Component Memory - SD - IS42S32160F-7BLI Integrated Circuits (ICs) - Memory - Memory Memory Sdram, 512Mbit, 143Mhz, Bga-90; Dram Memory Configuration Integrated Silicon Solution (Issi) Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip SDRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 90-TFBGA 90-TFBGA BGA BGA; 90-TFBGA
Supply Voltage 3V ~ 3.6V 3 Surface Mount 3V ~ 3.6V 3.6V; 3V ~ 3.6V
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