Integrated Silicon Solution, Inc. Memory IS42S32160B-6BLI

Description
SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-WBGA (11x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-WBGA (11x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32160B-6BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-WBGA (11x13)

SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-WBGA (11x13)

Buy Now Datasheet
Memory - IS42S32160B-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 90-WBGA (11x13)

SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 90-WBGA (11x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 90WBGA

IC DRAM 512MBIT PARALLEL 90WBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42S32160B-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32160B-6BLI
Integrated Circuits (ICs) - Memory IS42S32160B-6BLI
IC DRAM 512MBIT PARALLEL 90WBGA

IC DRAM 512MBIT PARALLEL 90WBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32160B-6BLI-ND IS42S32160B-6BLI IS42S32160B-6BLI IS42S32160B-6BLI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
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