Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 811274-IS42S16400J-7
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 64Mb (4M x 16)
Access Time: 5.4ns
Supplier Device Package: 54-TFBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 143MHz
Memory Interface: Parallel
Manufacturer Package: 54-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 348
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V
SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
IC DRAM 64MBIT PAR 54TFBGA Product overview: IS42S16400J-7BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S16400J-7BLI
SDRAM Memory IC 64Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)
SDRAM, 64MBIT, 143MHZ, BGA-54; DRAM Type:SDR; DRAM Density:64Mbit; DRAM Memory Configuration:4M x 16bit; Clock Frequency:143MHz; Memory Case Style:BGA; No. of Pins:54Pins; Supply Voltage Nom:3.3V; Access Time:5.4ns; MSL:- RoHS Compliant: Yes
SDRAM, 64MBIT, 143MHZ, BGA-54; DRAM Memory Configuration:4M x 16bit; Memory Case Style:BGA; No. of Pins:54Pins; IC Interface Type:Parallel; Access Time:5.4ns; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature RoHS Compliant: Yes
IC DRAM 64MBIT PAR 54TFBGA
IC DRAM 64MBIT PARALLEL 54TFBGA
IC DRAM 64MBIT PARALLEL 54TFBGA
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 811274-IS42S16400J-7BLI | IS42S16400J-7BLI-ND | 774-IS42S16400J-7BLI | IS42S16400J-7BLI | 52T1698 | 65AC6006 | IS42S16400J-7BLI | IS42S16400J-7BLI | IS42S16400J-7BLI |
| Product Name | Memory - SDRAM - IS42S16400J-7BLI | Memory | Memory IC and Storage Component | Memory | Sdram, 64Mbit, 143Mhz, Bga-54; Dram Type Integrated Silicon Solution (Issi) | Sdram, 64Mbit, 143Mhz, Bga-54; Dram Memory Configuration Integrated Silicon Solution (Issi) | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | SDRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | |||
| Supply Voltage | 3V ~ 3.6V | 3V ~ 3.6V | 3 | 3.6V; 3V ~ 3.6V | Surface Mount | 3V ~ 3.6V | |||
| Density | 64000 kbits | 64000 kbits | 64000 kbits | 64000 kbits | 64000 kbits | 64000 kbits | 64000 kbits |
