IC DRAM 256MBIT PAR 54TFBGA Product overview: IS42S16160G-7BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S16160G-7BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1188981-IS42S16160G-
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 5.4ns
Categories: Integrated Circuits
Supplier Device Package: 54-TFBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 143MHz
Memory Interface: Parallel
Manufacturer Package: 54-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 348
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V
SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)
SDRAM, SDR, 256MBIT, 3.3V, 54BGA; DRAM Memory Configuration:16M x 16bit; Memory Case Style:BGA; No. of Pins:54Pins; IC Interface Type:LVTTL; Access Time:7ns; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature RoHS Compliant: Yes
IC DRAM 256MBIT PAR 54TFBGA
IC DRAM 256MBIT PARALLEL 54TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42S16160G-7BLI | 1188981-IS42S16160G-7BLI | IS42S16160G-7BLI-ND | IS42S16160G-7BLI | IS42S16160G-7BLI | 53W9291 | IS42S16160G-7BLI | IS42S16160G-7BLI |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - IS42S16160G-7BLI | Memory | Memory | Memory | Sdram, Sdr, 256Mbit, 3.3V, 54Bga; Dram Memory Configuration Integrated Silicon Solution (Issi) | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | SDRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 7 ns | 5.4 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | ||
| Address Bus Width | 16 bits | |||||||
| Package Type | BGA; Tray | 54-TFBGA | BGA; 54-TFBGA | BGA | 54-TFBGA |
