SDRAM Memory IC 256Mb (16M x 16) Parallel 200MHz 5ns 54-TFBGA (8x8)
256M, 3.3V, SDRAM, 16Mx16, 200Mhz, 54 ball BGA (8Mm x 8mm) RoHS, T&R
IC DRAM 256MBIT PARALLEL 54TFBGA
SDRAM Memory IC 256Mbit Parallel 200 MHz 5 ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S16160G-5BL-TR-ND | 29X5172 | IS42S16160G-5BL-TR | IS42S16160G-5BL-TR | IS42S16160G-5BL-TR |
| Product Name | Memory | 256M, 3.3V, Sdram, 16Mx16, 200Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, T&r Integrated Silicon Solution (Issi) | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | |
| Package Type | 54-TFBGA | BGA | BGA; 54-TFBGA |
