Integrated Silicon Solution, Inc. Memory IS42RM32400H-75BI-TR

Description
SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)
Datasheet
Description
SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42RM32400H-75BI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42RM32400H-75BI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42RM32400H-75BI-TR
Integrated Circuits (ICs) - Memory IS42RM32400H-75BI-TR
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42RM32400H-75BI-TR IS42RM32400H-75BI-TR IS42RM32400H-75BI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 6 ns 6 ns 6 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits
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