IC DRAM 64MBIT PARALLEL 90TFBGA Product overview: IS42RM32200M-6BLI-TR
Win Source Part Number: 1356822-IS42RM32200M
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 33 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Product Status: Active
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Base Product Number: IS42RM32200
Technology: SDRAM - Mobile
Mounting Type: Surface Mount
HTSUS: 8542.32.0002
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 2.3V ~ 2.7V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 64Mbit
Memory Organization: 2M x 32
Memory Interface: Parallel
Clock Frequency: 166 MHz
Access Time: 5.5 ns
SDRAM - Mobile Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
IC DRAM 64MBIT PARALLEL 90TFBGA
IC DRAM 64MBIT PARALLEL 90TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42RM32200M-6BLI-TR | 1356822-IS42RM32200M-6BLI-TR | IS42RM32200M-6BLI-TR | IS42RM32200M-6BLI-TR | IS42RM32200M-6BLI-TR |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Package Type | BGA; Tape & Reel (TR) | BGA; 90-TFBGA | BGA |