Integrated Silicon Solution, Inc. Memory IS41C16256C-35TLI-TR

Description
DRAM - EDO Memory IC 4Mb (256K x 16) Parallel 18ns 40-TSOP
Request a Quote Datasheet
Description
DRAM - EDO Memory IC 4Mb (256K x 16) Parallel 18ns 40-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS41C16256C-35TLI-TR-ND - DigiKey
Thief River Falls, MN, United States
DRAM - EDO Memory IC 4Mb (256K x 16) Parallel 18ns 40-TSOP

DRAM - EDO Memory IC 4Mb (256K x 16) Parallel 18ns 40-TSOP

Buy Now Datasheet
Memory - IS41C16256C-35TLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM - EDO Memory IC 4Mbit Parallel 18 ns 40-TSOP

DRAM - EDO Memory IC 4Mbit Parallel 18 ns 40-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS41C16256C-35TLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS41C16256C-35TLI-TR
Integrated Circuits (ICs) - Memory IS41C16256C-35TLI-TR
IC DRAM 4MBIT PARALLEL 40TSOP

IC DRAM 4MBIT PARALLEL 40TSOP

Supplier's Site
IC DRAM 4MBIT PARALLEL 40TSOP

IC DRAM 4MBIT PARALLEL 40TSOP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS41C16256C-35TLI-TR-ND IS41C16256C-35TLI-TR IS41C16256C-35TLI-TR IS41C16256C-35TLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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