Integrated Device Technology 3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 71V67803S150BG

Description
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

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Product
Description
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3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM - 71V67803S150BG - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM
71V67803S150BG
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 71V67803S150BG
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V67803S150BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V67803S150BG
Integrated Circuits (ICs) - Memory - Memory 71V67803S150BG
IC SRAM 9MBIT PARALLEL 119PBGA

IC SRAM 9MBIT PARALLEL 119PBGA

Supplier's Site
Memory - 71V67803S150BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 150 MHz 3.8 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 150 MHz 3.8 ns 119-PBGA (14x22)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V67803S150BG 71V67803S150BG 71V67803S150BG
Product Name 3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 150 MHz 150 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512 kbits 9000 kbits 9000 kbits
Number of Words 512 k
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