Integrated Device Technology 3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 71V67803S150BG

Description
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM - 71V67803S150BG - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM
71V67803S150BG
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 71V67803S150BG
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Memory - 71V67803S150BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 150 MHz 3.8 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 150 MHz 3.8 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V67803S150BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V67803S150BG
Integrated Circuits (ICs) - Memory - Memory 71V67803S150BG
IC SRAM 9MBIT PARALLEL 119PBGA

IC SRAM 9MBIT PARALLEL 119PBGA

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V67803S150BG 71V67803S150BG 71V67803S150BG
Product Name 3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 150 MHz 150 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512 kbits 9000 kbits 9000 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CY14ME064J2A-SXIT - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category NVSRAM; NVSRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64 kbits
View Details
2 suppliers
 - 27128A-20/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category EPROM
Package Type DIP; CDIP
View Details
4 suppliers
SM28VLT32-HT 32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus - SM28VLT32SKGD3 - Texas Instruments
Specs
Memory Category Flash
Operating Temperature -55 to 210 C (-67 to 410 F)
Density 32000 kbits
View Details
7 suppliers
SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details