Integrated Device Technology 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S85BGG8

Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM - 71V67703S85BGG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
71V67703S85BGG8
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S85BGG8
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V67703S85BGG8
Product Name 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DD3K128M72PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details
SDRAM - 2420768 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - 448-CY62128EV30LL-45SXI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits
View Details
4 suppliers