Integrated Device Technology 3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM 71V67603S133BQGI

Description
The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .The order of these three addresses are defined by the internal burst counter and the LBO input pin.
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Description
The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .The order of these three addresses are defined by the internal burst counter and the LBO input pin.
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3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM - 71V67603S133BQGI - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM
71V67603S133BQGI
3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM 71V67603S133BQGI
The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .The order of these three addresses are defined by the internal burst counter and the LBO input pin.

The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .The order of these three addresses are defined by the internal burst counter and the LBO input pin.

Supplier's Site Datasheet
Memory IC and Storage Component - 774-71V67603S133BQGI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71V67603S133BQGI
Memory IC and Storage Component 774-71V67603S133BQGI
IC SRAM 9MBIT PARALLEL 165CABGA Product overview: 71V67603S133BQGI from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V67603S133BQGI can be used for catalog matching and distributor lookup.

IC SRAM 9MBIT PARALLEL 165CABGA Product overview: 71V67603S133BQGI from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V67603S133BQGI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - 71V67603S133BQGI - Rochester Electronics
Newburyport, MA, United States
256K X 36 3.3V Synchronous SRAM 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

256K X 36 3.3V Synchronous SRAM 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Supplier's Site Datasheet
Memory - 71V67603S133BQGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V67603S133BQGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V67603S133BQGI
Integrated Circuits (ICs) - Memory - Memory 71V67603S133BQGI
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site

Technical Specifications

  Integrated Device Technology ERSAELECTRONICS PTE. LTD. Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V67603S133BQGI 774-71V67603S133BQGI 71V67603S133BQGI 71V67603S133BQGI 71V67603S133BQGI
Product Name 3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256 kbits 9000 kbits 9000 kbits
Number of Words 256 k
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