The 71V67602 3.3V CMOS SRAM is organized as 256K x 36. The 71V676 SRAM contains write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
256K X 36 3.3V Synchronous SRAM 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
IC SRAM 9MBIT PARALLEL 100TQFP
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x14)
| Integrated Device Technology | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67602S166PFG | 71V67602S166PFG | 71V67602S166PFG | 71V67602S166PFG |
| Product Name | 3.3V 256K x 36 Synchronous 2.5V I/O PipeLined SRAM | Integrated Circuits (ICs) - Memory - Memory | Memory | |
| Memory Category | SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Data Rate | 166 MHz | 166 MHz | ||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 256 kbits | 9000 kbits | 9000 kbits | |
| Number of Words | 256 k |
