The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
512K X 18, 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter, Flow-Through Output
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 100-TQFP (14x14)
IC SRAM 9MBIT PARALLEL 100TQFP
| Integrated Device Technology | Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V65903S85PFGI | 71V65903S85PFGI | 71V65903S85PFGI | 71V65903S85PFGI |
| Product Name | 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM | Memory | Integrated Circuits (ICs) - Memory - Memory | |
| Memory Category | SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Cycle Time | 85 ns | 8.5 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512 kbits | 9000 kbits | 9000 kbits | |
| Number of Words | 512 k |
