Integrated Device Technology 3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65803S133BQI

Description
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

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3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM - 71V65803S133BQI - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM
71V65803S133BQI
3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65803S133BQI
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Memory - 71V65803S133BQI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V65803S133BQI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V65803S133BQI
Integrated Circuits (ICs) - Memory 71V65803S133BQI
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V65803S133BQI 71V65803S133BQI 71V65803S133BQI
Product Name 3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 133 MHz 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512 kbits 9000 kbits 9000 kbits
Number of Words 512 k
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