Integrated Device Technology 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65703S85BQG8

Description
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM - 71V65703S85BQG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
71V65703S85BQG8
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65703S85BQG8
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V65703S85BQG8
Product Name 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Cycle Time 85 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 7164L20TP - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details
Memories - nvSRAM (non-volatile SRAM) - CY14B512Q2A-SXI - CY14B512Q2A-SXI - Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits
View Details
7 suppliers
Memory - AS29F040 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details