Integrated Device Technology Memory 71V65603S150PF

Description
256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output
Request a Quote Datasheet
Description
256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V65603S150PF - Rochester Electronics
Newburyport, MA, United States
256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output

256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output

Supplier's Site Datasheet
Memory - 71V65603S150PF - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V65603S150PF 71V65603S150PF
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type QFP; TQFP; TQFP100 QFP; 100-LQFP
Access Time 3.8 ns
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8521AV-25 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers
Memory - CY14ME064J1-SXIT - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category NVSRAM; SRAM Chip
Density 64 kbits
View Details
2 suppliers
Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71V321S35J - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 16 kbits
View Details